Описание
Характеристики
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Описание
GaN HEMTs MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.
Характеристики
Статус наличия (общий)
Под заказ
Детали наличия
,срок 6-7 недель
Тех. документация (ссылки)
https://static.chipdip.ru/lib/342/DOC050342873.pdf
Ссылка на товар
https://www.chipdip.ru/product/cgh40006s-gan-fets-hemt-dc-6.0ghz-6-watt-macom-8006220069
Производитель
MACOM
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