MMBF4391LT1G, Транзистор: N-JFET, полевой, 30В, 0,225Вт, SOT23, 50мА

TRANSISTOR, JFET, N, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:50mA; Zero Gate Voltage Drain Current Idss Max:150mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Max:14pF; Current Idss Max:150mA; Current Idss Min:50mA; Drain Source Voltage Vds:30V; No. of Pins:3Pins; On State Resistance Max:30ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:225mW; SMD Marking:6J; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Voltage Vgs Off Min:-4V; Zero Gate Voltage Drain Current Idss:50mA to 150mA